Sub-50 cm/s surface recombination velocity in InGaAsP/InP ridges

The III–V InP/InGaAsP/InGaAs material family is important for photonic devices due to its optical emission and absorption in the 1.55 1.3 μm telecommunication bands interconnects. However, InGaAsP/InGaAs generally suffer from relatively high surface recombination velocity—compared Si [Das et al., 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (IEEE, Calgary, AB, 2020), pp. 1167–1170] InP [Joyce Nano Lett. 12, 5325–5330 (2012)], which reduces efficiency can increase noise nanophotonic devices. Here, we demonstrate an efficient method passivate using a combination of sulfur-saturated ammonium sulfide atomic layer deposition. After annealing, passivation led velocity as low 45 cm/s, corresponding >180× photoluminesence nanoscale light-emitting device with 200 nm width.